BUK456 DATASHEET PDF

BUKB Transistor Datasheet, BUKB Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. BUK datasheet, BUK circuit, BUK data sheet: PHILIPS – PowerMOS transistor,alldatasheet, datasheet, Datasheet search site for Electronic. Buy Transistor, MOSFET, BUKA BUKA. Browse our latest miscellaneous Technical Reference. BUKA/B Power MOSFET Data Sheet.

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Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

Application information Where application information is given, it is advisory and does not form part of the specification. Stress above one or more of the limiting values may cause permanent damage to the device.

Product specification This data sheet contains final product specifications. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Product specification This data sheet contains final product specifications.

The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. UNIT – – 1. Normalised continuous drain current. UNIT – – 1. Typical reverse diode current. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

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Normalised drain-source on-state resistance. Typical turn-on gate-charge characteristics. Exposure to limiting values for extended periods may affect device reliability. Normalised drain-source on-state resistance.

Normalised continuous drain current. No liability will be accepted by the publisher for any consequence of its use. Typical reverse diode current.

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May 6 Rev 1. Exposure to limiting values for extended periods may affect device reliability. April 6 Rev 1. No liability will be accepted by the publisher for any consequence of its use.

Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Typical turn-on gate-charge characteristics.

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These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. Typical capacitances, Ciss, Datashheet, Crss.

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Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide. Refer to mounting instructions for TO envelopes.

Typical capacitances, Ciss, Coss, Crss. Stress above one or more of the limiting values may cause permanent damage to the device. Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide.

Application information Where application information bum456 given, it is advisory and does not form part of the specification. May 7 Rev 1.

The information presented in this document does not form part of any datasueet or contract, it is believed to be accurate and reliable and may be changed without notice. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

April 7 Rev 1. TOAB; pin 2 connected to mounting adtasheet.